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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC937 DESCRIPTION *High Breakdown Voltage: VCBO= 1200V(Min) *High Reliability APPLICATIONS *Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1200 V 500 V 6 V 2.5 A 6 A 22 W .cn mi e ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25 TJ Junction Temperature 125 Tstg Storage Temperature Range -45~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC937 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.8 V ICBX Collector Cutoff Current VCB= 1200V; VEB= 1.5V 1 mA IEBO Emitter Cutoff Current tf Fall Time w w. w .cn mi cse is IC= 2.5A, IB1= 0.8A, IB2= -1.1A; LB= 10H VEB= 6V; IC= 0 0.2 mA 1.2 s isc Websitewww.iscsemi.cn 2 |
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